Julien Cors, Aditya Kashyap, et al.
PLoS ONE
An interface-marker technique has been used to investigate the relative rates of diffusion of Si and of metal atoms during the growth of metal silicide films. The technique enables recognition of a reference plane in thin film diffusion using Rutherford backscattering, while minimizing any perturbation of the diffusion process. Examples are drawn from studies of the growth of silicides of W, Mo, Ta, Nb, V, Pd and Pt. © 1980.
Julien Cors, Aditya Kashyap, et al.
PLoS ONE
D.E. Eastman, J.J. Donelon, et al.
Nuclear Instruments and Methods
David P. Taylor, Govind V. Kaigala
IEEE T-BME
Soheil Saghafi, Timothy Rumbell, et al.
Bulletin of Mathematical Biology