Constance Rost, Siegfried Karg, et al.
Synthetic Metals
Paper
Ambipolar light-emitting organic field-effect transistor
Abstract
A light-emitting organic field-effect transistor (OFET) with ambipolar current characteristics was studied. The light intensity was controlled by both the drain-source voltage and the gate voltage. The device structure serves as a model system for ambipolar light-emitting OFETs. The device demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors.
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Constance Rost, Siegfried Karg, et al.
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