Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Carbon doping of AlxGa1-xAs with x = 0 to 0.3 has been investigated using trimethylarsine (TMAs) as the carbon precursor. Carbon concentrations from 5×1017 to {reversed tilde equals} 1020cm-3 have been achieved using AsH3/TMAs mixtures or TMAs alone. The carbon concentration increases with aluminum composition and decreasing AsH3/TMAs ratio. A contraction in the lattice constant is observed for carbon concentrations larger than {reversed tilde equals} 1018 cm-3 which is attributed to substitutional carbon. The carbon incorporation is non-uniform at higher carbon concentrations. The electrical activation of carbon in (Al,Ga)As is however, very low, of the order of 5%. © 1991.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
D.J. Wolford, G.D. Gilliland, et al.
Gallium Arsenide and Related Compounds 1991
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Eloisa Bentivegna
Big Data 2022