Lawrence Suchow, Norman R. Stemple
JES
Bisphenol‐A polysulfone, poly(oxy‐1,4‐phenylenesulfonyl‐1,4‐phenyleneoxy‐1, 4‐phenyleneisopropylidene‐1,4‐phenylene), PSF (I) showed greatly reduced resistance to electron beam irradiation when subjected simultaneously to an applied tensile stress. The creep rate increased, and the time (dose) to failure of the sample decreased with increasing stress. The failure strain was constant for different applied stresses. Air, oxygen, and moisture caused decreases in radiation resistance compared with a dry nitrogen atmosphere. Increasing the irradiation temperature from 0 to 90°C resulted in substantially decreased radiation resistance. Copyright © 1992 John Wiley & Sons, Inc.
Lawrence Suchow, Norman R. Stemple
JES
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics