Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
We present a new calculation of the absorption due to transitions of holes between neutral acceptors and the various valence-band sublevels in GaAs and GaP. The acceptor wave function was approximated by a previously suggested expression for ground-state wave functions appropriate to complicated band extrema. Numerical calculations of the absorption from intervalence-band transitions of free holes and neutral acceptors have been performed. Good agreement with experimental results is obtained. © 1973 The American Physical Society.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Sung Ho Kim, Oun-Ho Park, et al.
Small
Robert W. Keyes
Physical Review B
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering