Revanth Kodoru, Atanu Saha, et al.
arXiv
Paper
A thin film metal base transistor structure with amorphous silicon
Abstract
We describe a metal base transistor structure using amorphous silicon prepared from a silane glow discharge. We give some of the operating characteristics and evidence for true injection. The highest measured injection ratio was 8%. We discuss the reasons for the low injection ratios and suggest some improvements. © 1978.
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