A Circuit Concept for Reducing Soft Error in Highspeed Memory Cells

This paper describes a circuit concept for reducing the soft error of highspeed flip-flop-type memory cells. For bipolar static memory cells, the essence of the concept is that the potential at the common-emitter node of the cross-coupled transistors (flip-flop) should be allowed to swing freely. This can be implemented by decoupling the common-emitter node from the heavily capacitively loaded lower word line, for example, by inserting a current source or a current mirror betweeen the two. The predicted improvement of QCRIT, soft-error rate, and the experimental results are presented. © 1988 IEEE