Joachim N. Burghartz, Andrew C. Megdanis, et al.
IEEE Electron Device Letters
A 2.4-GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12-GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2-nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBe/Hz is achieved at 20-kHz offset. The circuit dissipates 50 mW from a 3.6-V supply.
Joachim N. Burghartz, Andrew C. Megdanis, et al.
IEEE Electron Device Letters
Joachim N. Burghartz, Jack Y.-C. Sun, et al.
VLSI Technology 1990
Shu-Jen Han, Satoshi Oida, et al.
IEEE Electron Device Letters
Mehmet Soyuer, Keith A. Jenkins, et al.
IEEE Journal of Solid-State Circuits