Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE Transactions on Electron Devices
A 2.4-GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12-GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2-nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBe/Hz is achieved at 20-kHz offset. The circuit dissipates 50 mW from a 3.6-V supply.
Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE Transactions on Electron Devices
Albert J. Fixl, Keith A. Jenkins
Microelectronic Engineering
Anuja Sehgal, Peilin Song, et al.
ESSCIRC 2006
John Liobe, Keith A. Jenkins
RFIC 2005