3D-XY critical behavior in La2-xSrxCuO4 thin films probed by penetration depth measurement

Y. Jaccard; T. Schneider; J.P. Locquet; E.J. Williams; Ø. Fischer; P. Martinoli

doi:10.1007/BF02583847

Czechoslovak Journal of Physics

Paper

01 Dec 1996

3D-XY critical behavior in La_2-xSr_xCuO₄ thin films probed by penetration depth measurement

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Abstract

We sketch the evidence for anisotropic 3D-XY critical behavior in La2-xSrxCuO4 thin films and explore the implications of this scenario, supplemented by the experimental phase transition line.

Paper

Kronig-Penney-type calculations for electron tunneling through thin disordered dielectric films

E. Stoll, T. Schneider

Solid State Communications

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Interface formation and defect structures in epitaxial La ₂Zr₂O₇ thin films on (111) Si

J.W. Seo, J. Fompeyrine, et al.

Applied Physics Letters

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Electron correlations at metallic densities

T. Schneider

Physica

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Critical behavior of the one-dimensional S=1 XY model with single-ion anisotropy

O.F. De Alcantara Bonfim, T. Schneider

Physical Review B

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