Heavy ion testing at the galactic cosmic ray energy peak
Jonathan A. Pellish, Michael A. Xapsos, et al.
RADECS 2009
Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are presented. Novel data analysis is shown to be important for hardness assurance where Monte Carlo modeling with a realistic heavy ion track structure, along with a new visualization aid (the Angular Dependent Cross-section Distribution, ADCD), allows one to quickly assess the improvements, or limitations, of a particular latch design. It was found to be an effective technique for making SEU predictions for alternative 32 nm SOI latch layouts. © 2011 IEEE.
Jonathan A. Pellish, Michael A. Xapsos, et al.
RADECS 2009
James R. Schwank, Marty R. Shaneyfelt, et al.
RADECS 2011
Michael S. Gordon, Kenneth P. Rodbell, et al.
IBM J. Res. Dev
David F. Heidel, Paul W. Marshall, et al.
IEEE TNS