Conference paper
23 ps/2.1 mW ECL gate
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
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