Conference paper
High speed lateral trench detectors with a junction substrate
Qiqing Ouyang, J. Schaub
Device Research Conference 2003
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
Qiqing Ouyang, J. Schaub
Device Research Conference 2003
G. Dehlinger, S.J. Koester, et al.
IEEE Photonics Technology Letters
M. Yang, J. Schaub, et al.
VLSI Technology 2003
J. Schaub, F. Gebara, et al.
IEEE SOI 2006