Qinghuang Lin  Qinghuang Lin photo       

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Research Staff Member, Project Manager and IBM Master Inventor
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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Honors and Awards 

o SPIE Fellow, The International Society for Optical Engineering (SPIE), 2017

o IBM Research Accomplishment Award for Contributions to Fundamental Understanding of Line Edge Roughness in Semiconductor Technology, 2016

o IBM Research Outstanding Accomplishment Award for Spin Torque Magnetic Random Access Memory (MRAM), 2015

o IBM Research Accomplishment Award for 193nm Negative-Tone Development Process for Advanced Memory and Logic Fabrication, 2015

o PMSE Fellow, Division of Polymeric Materials Science and Engineering (PMSE), American Chemical Society, 2015

o 25 IBM Invention Plateau Achievement Awards, 1999-2015

o ACS Fellow, American Chemical Society (ACS), 2014

o MRS Best Poster Award, MRS Fall Meeting, 2013

o 2 IBM High Value Patent Awards, 2012

o IBM Master Inventor, 2011

o Best Poster Award (only one award from BEOL technology area, IBM Semiconductor Research Alliance Technical Review Meeting, 2008, Participating companies included IBM, AMD, Freescale, STMicro, and Toshiba)

o Most Innovative Paper Award, IBM Fishkill Technical Vitality Conference, 2007

o IBM "I Innovate" recognition for "Advanced Interconnect Integration," 2005

o IBM Research Division Award for "Invention, development and implementation of 248nm bilayer resist in manufacturing," 2002. This IBM bilayer resist technology was also part of the 40 years of innovations in semiconductor technology that won IBM 2004 US National Medal of Technology.

o IBM One-Team Award for "Bilayer Process," 2002

o Young Faculty Award, Tsinghua University, 1989

o Outstanding Graduate Award, Tsinghua University, 1985

o Member of Alpha Sigma Mu, International Materials Engineering Honor Society

o Member of Tau Beta Pi, National Engineering Honor Society