Jean Fompeyrine  Jean Fompeyrine photo       

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Zurich Research Laboratory, Zurich, Switzerland
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Professional Associations

Professional Associations:  European Materials Research Society


2012

Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
MJP Hopstaken, D. Pfeiffer, M. Copel, MS Gordon, T. Ando, V. Narayanan, H. Jagannathan, S. Molis, JA Wahl, H. Bu, D.K. Sadana, L. Czornomaz, C. Marchiori, J. Fompeyrine
Surface and Interface Analysis 45(1), 338-344, Wiley Online Library, 2012

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53 Ga0.47As metal-oxide-semiconductor field-effect-transistors
M. El Kazzi, L. Czornomaz, C. Rossel, C. Gerl, D. Caimi, H. Siegwart, J. Fompeyrine, C. Marchiori
Applied Physics Letters 100(6), 063505-063505, 2012

Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
L Czornomaz, M El Kazzi, D Caimi, C Rossel, E Uccelli, M Sousa, C Marchiori, M Richter, H Siegwart, J Fompeyrine
70th Annual Device Research Conference (DRC), pp. 207-208, 2012

CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
L. Czornomaz, M. El Kazzi, M. Hopstaken, D. Caimi, P. Machler, C. Rossel, M. Bjoerk, C. Marchiori, H. Siegwart, J. Fompeyrine
Solid-State Electronics74, 71-76, Elsevier, 2012


2011

Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germanium
C. Andersson, MJ Suess, DJ Webb, C. Marchiori, M. Sousa, D. Caimi, H. Siegwart, J. Fompeyrine
Journal of Applied Physics 110(11), 114504-114504, AIP, 2011

Self-aligned S/D regions for InGaAs MOSFETs
L Czornomaz, M El Kazzi, D Caimi, P Machler, C Rossel, M Bjoerk, C Marchiori, J Fompeyrine
Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp. 219-222, 2011

Characterization of Strontium Oxide Layers on Silicon for CMOS High-K Gate Stack Scaling
J. Bruley, M. Frank, C. Marchiori, J. Fompeyrine, V. Narayanan
Microscopy and Microanalysis 17(S2), 1350-1351, Cambridge Univ Press, 2011

GaAs on 200mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
M. Richter, C. Rossel, DJ Webb, T. Topuria, C. Gerl, M. Sousa, C. Marchiori, D. Caimi, H. Siegwart, PM Rice
Journal of Crystal Growth 323(1), 387-392, 2011

1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
M. El Kazzi, DJ Webb, L. Czornomaz, C. Rossel, C. Gerl, M. Richter, M. Sousa, D. Caimi, H. Siegwart, J. Fompeyrine
Microelectronic Engineering 88(7), 1066-1069, 2011

Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
M. El Kazzi, L. Czornomaz, DJ Webb, C. Rossel, D. Caimi, H. Siegwart, J. Fompeyrine, C. Marchiori
Applied Physics Letters 99(5), 052102-052102, 2011


Epitaxial SrO interfacial layers for HfO2-Si gate stack scaling
C. Marchiori, MM Frank, J. Bruley, V. Narayanan, J. Fompeyrine
Applied Physics Letters 98(5), 052908-052908, 2011


2010

Structural and electrical properties of fully strained (In, Ga) As field effect transistors with in situ deposited gate stacks
C. Marchiori, E. Kiewra, J. Fompeyrine, C. Gerl, C. Rossel, M. Richter, J.P. Locquet, T. Smets, M. Sousa, C. Andersson
Applied Physics Letters 96(21), 212901-212901, 2010

Structural properties of epitaxial SrHfO3 thin films on Si (001)
M. Sawkar-Mathur, C. Marchiori, J. Fompeyrine, M.F. Toney, J. Bargar, J.P. Chang
Thin Solid Films 518(6), S118-S122, Elsevier, 2010

Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
M.J. Hopstaken, D. Pfeiffer, M.S. Gordon, E.W. Kiewra, Y. Sun, D.K. Sadana, T. Topuria, P.M. Rice, P. Ronsheim, C. Gerl
ECS Transactions 28(5), 207-215, 2010


2009

Impact of La2 O3 Thickness on HfO2/La2 O3/Ge capacitors and p-channel MOSFETs
C. Andersson, M. Sousa, C. Marchiori, D.J. Webb, D. Caimi, H. Siegwart, J. Fompeyrine, C. Rossel, A. Dimoulas, Y. Panayiotatos
Solid State Device Research Conference, 2009. ESSDERC'09. Proceedings of the European, pp. 173-176

CMOS Scaling Beyond 22 nm Node
D. Sadana, S.W. Bedell, JP De Souza, Y. Sun, E. Kiewra, A. Reznicek, T. Adams, K. Fogel, GG Shahidi, C. Marchiori, others
ECS Transactions 19(5), 267-274, The Electrochemical Society, 2009

Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices
C. Andersson, C. Rossel, M. Sousa, DJ Webb, C. Marchiori, D. Caimi, H. Siegwart, Y. Panayiotatos, A. Dimoulas, J. Fompeyrine
Microelectronic Engineering 86(7), 1635-1637, Elsevier, 2009

H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
C. Marchiori, DJ Webb, C. Rossel, M. Richter, M. Sousa, C. Gerl, R. Germann, C. Andersson, J. Fompeyrine
Journal of Applied Physics 106(11), 114112, 2009


2008

Inversion mode n-channel GaAs field effect transistor with high-k/metal gate
JP De Souza, E. Kiewra, Y. Sun, A. Callegari, DK Sadana, G. Shahidi, DJ Webb, J. Fompeyrine, R. Germann, C. Rossel
Applied Physics Letters 92(15), 153508, 2008

Ge p-channel MOSFETS with La2O3 and Al2O3 gate dielectrics
C. Rossel, A. Dimoulas, A. Tapponnier, D. Caimi, DJ Webb, C. Andersson, M. Sousa, C. Marchiori, H. Siegwart, J. Fompeyrine, others
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European, pp. 79-82

Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si
C. Dieker, J.W. Seo, A. Guiller, M. Sousa, J.P. Locquet, J. Fompeyrine, Y. Panayiotatos, A. Sotiropoulos, K. Argyropoulos, A. Dimoulas
Microscopy of Semiconducting Materials 2007, pp. 119-122, Springer, 2008

From GaAs MOSFETs to epitaxial oxides on silicon: old and new MBE stories.
J. Fompeyrine
Bulletin of the American Physical Society53, APS, 2008

Gate Dielectrics for High Mobility Semiconductors
A. Dimoulas, Y. Panayiotatos, P. Tsipas, S. Galata, G. Mavrou, A. Sotiropoulos, C. Marchiori, C. Rossel, D. Webb, C. Andersson, others
ECS Transactions 16(5), 295-306, The Electrochemical Society, 2008

Antiferromagnetic LaFeO3 thin films and their effect on exchange bias
J.W. Seo, EE Fullerton, F. Nolting, A. Scholl, J. Fompeyrine, J.P. Locquet
Journal of Physics: Condensed Matter 20(26), 264014, IOP Publishing, 2008


2007

Enhancement-Mode Buried-Channel In0.7Ga0.3As/In0.52A0.48As MOSFETs With High-k Gate Dielectrics
Y Sun, EW Kiewra, SJ Koester, N Ruiz, A Callegari, KE Fogel, DK Sadana, J Fompeyrine, DJ Webb, J P Locquet, others
Electron Device Letters, IEEE 28(6), 473-475, IEEE, 2007

Fabrication of MBE High-κ MOSFETs in a Standard CMOS Flow
L. Pantisano, T. Conard, T. Scram, W. Deweerd, S. Gendt, M. Heyns, ZM Rittersma, C. Marchiori, M. Sousa, J. Fompeyrine, others
Advanced Gate Stacks for High-Mobility Semiconductors, 363-374, Springer, 2007

Enhancement-Mode Buried-Channel
Yanning Sun, EW Kiewra, SJ Koester, N Ruiz, A Callegari, KE Fogel, DK Sadana, J Fompeyrine, DJ Webb, JP Locquet, others
IEEE electron device letters 28(6), 473, 2007

Evaluation of a SrTiO3 sublayer for the integration of ferroelectric material KTN thin films in silicon technology
A. Guiller, AG Moussavou, M. Guilloux-Viry, R. Sauleau, K. Mahdjoubi, J. Fompeyrine, A. Perrin, others
E-MRS 2007

Post-Si CMOS: III-V n-MOSFETs with High-k Gate Dielectrics
Y. Sun, SJ Koester, EW Kiewra, JP de Souza, N. Ruiz, JJ Bucchignano, A. Callegari, KE Fogel, DK Sadana, J. Fompeyrine, others
Compound Semiconductor Integrated Circuit Symposium, 2007

Optical properties of epitaxial SrHfO3 thin films grown on Si
M. Sousa, C. Rossel, C. Marchiori, H. Siegwart, D. Caimi, J.P. Locquet, D.J. Webb, R. Germann, J. Fompeyrine, K. Babich
Journal of Applied Physics 102(10), 104103, 2007

Epitaxial germanium-on-insulator grown on (001) Si
J.W. Seo, C. Dieker, A. Tapponnier, C. Marchiori, M. Sousa, J.P. Locquet, J. Fompeyrine, A. Ispas, C. Rossel, Y. Panayiotatos
Microelectronic Engineering 84(9), 2328-2331, ., 2007

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAPs: Effect of GaAs surface reconstruction
DJ Webb, J. Fompeyrine, S. Nakagawa, A. Dimoulas, C. Rossel, M. Sousa, R. Germann, SF Alvarado, J.P. Locquet, C. Marchiori
Microelectronic Engineering 84(9), 2142-2145, 2007

SrHfO3 as gate dielectric for future CMOS technology
C. Rossel, M. Sousa, C. Marchiori, J. Fompeyrine, D. Webb, D. Caimi, B. Mereu, A. Ispas, J.P. Locquet, H. Siegwart
Microelectronic Engineering 84(9), 1869-1873, 2007


2006

Solid phase epitaxy of SrTiO3 on (Ba, Sr) O/Si (100): The relationship between oxygen stoichiometry and interface stability
GJ Norga, C Marchiori, C Rossel, A Guiller, Jean-Pierre Locquet, H Siegwart, D Caimi, J Fompeyrine, Jin Won Seo, Ch Dieker
Journal of Applied Physics 99(8), 084102, AIP, 2006

Thermal stability of the SrTiO/(Ba, Sr)O stacks epitaxially grown on Si
C. Marchiori, M. Sousa, A. Guiller, H. Siegwart, J.P. Locquet, J. Fompeyrine, GJ Norga, J.W. Seo
Applied Physics Letters88, 072913, 2006

High-κ dielectrics for the gate stack
J.P. Locquet, C. Marchiori, M. Sousa, J. Fompeyrine, J.W. Seo
Journal of Applied Physics 100(5), 051610, AIP, 2006

B-site substitution in LaTiO3 thin films: influence on the titanium oxidation state.
A Guiller, C Marchiori, M Sousa, R Germann, JP Locquet, J Fompeyrine, JW Seo
Bulletin of the American Physical Society, APS, 2006

Solid phase epitaxy of SrTiO3 on (Ba,Sr)
GJ Norga, C. Marchiori, C. Rossel, A. Guiller, JP Locquet, H. Siegwart, D. Caimi, J. Fompeyrine, JW Seo, C. Dieker
Journal of Applied Physics 99(8), 084102-084102, AIP, 2006

High Mobility Channels for Ultimate CMOS
D. Sadana, S. Koester, Y. Sun, EW Kiewra, S.W. Bedell, A. Reznicek, J. Ott, K. Fogel, D.J. Webb, J. Fompeyrine, others
ECS Transactions 3(2), 343-354, The Electrochemical Society, 2006

Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO3 Gate Dielectrics on Si (100)
G. Norga, C. Marchiori, C. Rossel, A. Guiller, J.P. Locquet, H. Siegwart, D. Caimi, J. Fompeyrine, JW Seo, C. Dieker
MRS Proceedings, 2006

Thermal stability of the SrTiO3/(Ba, Sr)O
C. Marchiori, M. Sousa, A. Guiller, H. Siegwart, J.P. Locquet, J. Fompeyrine, GJ Norga, JW Seo
Applied Physics Letters 88(7), 072913-072913, AIP, 2006

GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO2 Gate Dielectrics
SJ Koester, EW Kiewra, Y. Sun, DA Neumayer, JA Ott, DK Sadana, DJ Webb, J. Fompeyrine, J.P. Locquet, M. Sousa, others
Device Research Conference, 2006 64th, pp. 43-44

Current challenges in Ge MOS technology
A. Dimoulas, M. Houssa, A. Ritenour, J. Fompeyrine, W. Tsai, JW Seo, Y. Panayiotatos, P. Tsipas, D.P. Brunco, M.R. Caymax, others
ECS Transactions 3(2), 371-384, The Electrochemical Society, 2006

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and alpha-Si/SiO2 interlayers
EW Kiewra, Y. Sun, DA Neumayer, JA Ott, M. Copel, DK Sadana, DJ Webb, J. Fompeyrine, C. Marchiori, M. Sousa, others
2006 - en.scientificcommons.org

Solid phase epitaxy of SrTiO on (Ba, Sr) O/ Si (100): The relationship between oxygen stoichiometry and interface stability
GJ Norga, C. Marchiori, C. Rossel, A. Guiller, J.P. Locquet, H. Siegwart, D. Caimi, J. Fompeyrine, J.W. Seo, C. Dieker
Journal of Applied Physics99, 084102, 2006

Characterization of field-effect transistors with La2Hf2O7 and Hf
ZM Rittersma, JC Hooker, G. Vellianitis, J.P. Locquet, C. Marchiori, M. Sousa, J. Fompeyrine, L. Pantisano, W. Deweerd, T. Schram
Journal of Applied Physics 99(2), 024508-024508, 2006

Buried-channel In0.70Ga0.30As/In0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics
Y. Sun, SJ Koester, EW Kiewra, KE Fogel, DK Sadana, DJ Webb, J. Fompeyrine, J.P. Locquet, M. Sousa, R. Germann
64th Device Research Conference, pp. 49-50, 2006

Field-effect transistors with SrHfO3 as gate oxide
C. Rossel, B. Mereu, C. Marchiori, D. Caimi, M. Sousa, A. Guiller, H. Siegwart, R. Germann, J.P. Locquet, J. Fompeyrine
Applied Physics Letters 89(5), 053506, AIP, 2006

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si/SiO2 interlayers
SJ Koester, EW Kiewra, Y. Sun, DA Neumayer, JA Ott, M. Copel, DK Sadana, DJ Webb, J. Fompeyrine, J.P. Locquet
Applied Physics Letters 89(4), 042104, 2006


2005

Electric-field-induced modulation of the magnetic penetration depth of superconducting La2-xSrxCuO4 ultrathin films
A. Ruefenacht, P. Martinoli, J. Fompeyrine, D. Caimi, J.P. Locquet
Bulletin of the American Physical Society, APS, 2005

Phase of reflection high-energy electron diffraction oscillations during (Ba, Sr) O epitaxy on Si (100): A marker of Sr barrier integrity
GJ Norga, C. Marchiori, A. Guiller, J.P. Locquet, C. Rossel, H. Siegwart, D. Caimi, J. Fompeyrine, T. Conard
Applied Physics Letters 87(26), 262905-262905, AIP, 2005


2004

Orientation selection in functional oxide thin films
GJ Norga, L. Fé, F. Vasiliu, J. Fompeyrine, J.P. Locquet, O. Van der Biest
Journal of the European Ceramic Society 24(6), 969-974, Elsevier, 2004

Domain-size-dependent exchange bias in CoLaFeO3
A. Scholl, F. Nolting, J.W. Seo, H. Ohldag, J. Stohr, S. Raoux, J.P. Locquet, J. Fompeyrine
Applied Physics Letters 85(18), 4085-4087, AIP, 2004


2003

MBE-grown epitaxial oxides for advanced gate stack
J. FOMPEYRINE, G. NORGA, A. GUILLER, C. MARCHIORI, J.P. LOCQUET, H. SIEGWART, D. HALLEY, C. ROSSEL
WODIM: workshop on dielectrics in microelectronics, pp. 65--68, 2003

Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si
JW Seo, J. Fompeyrine, A. Guiller, G. Norga, C. Marchiori, H. Siegwart, J.P. Locquet
Applied Physics Letters 83(25), 5211-5213, AIP, 2003

Growth of Perovskites with Crystalline Interfaces on Si (100)
GJ Norga, A Guiller, C Marchiori, JP Locquet, H Siegwart, D Halley, C Rossel, D Caimi, JW Seo, J Fompeyrine
MRS Proceedings, pp. 219-226, 2003

Growth and electrical characterization of high K oxide films on SOI wafers.
J.P. Locquet, D. Halley, G. Norga, J. Fompeyrine, JW Seo, A. Guiller, C. Marchiori, H. Siegwart, C. Rossel
APS March Meeting Abstracts, pp. 6008, 2003

Growth of single unit-cell superconducting La2-xSrxCuO4 films
A. Rüfenacht, P. Chappatte, S. Gariglio, C. Leemann, J. Fompeyrine, J.P. Locquet, P. Martinoli
Solid-State Electronics 47(12), 2167-2170, Elsevier, 2003

Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-κ layer
D. Halley, G. Norga, A. Guiller, J. Fompeyrine, J.P. Locquet, U. Drechsler, H. Siegwart, C. Rossel
Journal of Applied Physics 94(10), 6607-6610, AIP, 2003


2002

Zirconates heteroepitaxy on silicon
J. Fompeyrine, J.W. Seo, H. Seigwart, C. Rossel, J.P. Locquet
APS March Meeting Abstracts, pp. 8005, 2002

Exchange coupling in LaFeO2/Co thin film systems
J.W. Seo, J. Fompeyrine, H. Seigwart, J.P. Locquet, E. Fullerton
APS Meeting Abstracts, pp. 15003, 2002

Observing a frozen ferromagnetic moment at the ferromagnet/antiferromagnet interface of an exchange bias system
A. Hoffmann, M. Fitzsimmons, JW Seo, H. Siegwart, J. Fompeyrine, J.P. Locquet, JA Dura, CF Majkrzak
APS Meeting Abstracts, pp. 15002, 2002

Induced magnetic moments at a ferromagnet-antiferromagnet interface
A. Hoffmann, J.W. Seo, M.R. Fitzsimmons, H. Siegwart, J. Fompeyrine, J.P. Locquet, JA Dura, CF Majkrzak
Physical Review B 66(22), 220406, APS, 2002


2001

Domain Structure in LaFeO3 Thin Films and Its Role on Exchange Coupling
J.W. Seo, J. Fompeyrine, H. Siegwart, J.P. Locquet
Materials Research Society Symposium Proceedings, pp. 8, 2001

Studies of the magnetic structure at the ferromagnet-antiferromagnet interface
A. Scholl, F. Nolting, J. Stohr, J. Luning, J.W. Seo, J.P. Locquet, J. Fompeyrine, S. Anders, H. Ohldag, H.A. Padmore
Journal of Synchrotron Radiation 8(2), 101-104, International Union of Crystallography, 2001

Exploring the microscopic origin of exchange bias with photoelectron emission microscopy
A. Scholl, F. Nolting, J. Stohr, T. Regan, J. Luning, J.W. Seo, J.P. Locquet, J. Fompeyrine, S. Anders, H. Ohldag, others
Journal of Applied Physics 89(11), 7266-7268, AIP, 2001


2000

Investigations of the surface morphology of La2 CuO4 MBE-grown thin films before and after electrochemical oxidation
A. Daridon, J. Fompeyrine, J.P. Locquet, C. Musil, H. Siegenthaler
Surface Science 465(1), 149-162, Elsevier, 2000

Nanoscale magnetostrictive response in a thin film owing to a local magnetic field
R. Berger, F. Krause, A. Dietzel, J.W. Seo, J. Fompeyrine, J.P. Locquet
Applied Physics Letters 76(5), 616-618, AIP, 2000

Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins
F. Nolting, A. Scholl, J. Stöhr, J.W. Seo, J. Fompeyrine, H. Siegwart, J.P. Locquet, S. Anders, J. Lüning, EE Fullerton, others
Nature 405(6788), 767-769, Nature Publishing Group, 2000

Observation of Antiferromagnetic Domains in Epitaxial Thin Films
F. Nolting, A. Scholl, J. Stöhr, J. Lüning, S. Anders, JW Seo, J. Fompeyrine, H. Siegwart, JP Locquet, EE Fullerton, others
Science 287(5455), 1014-1016, American Association for the Advancement of Science, 2000


1999

Growth and characterization of ferroelectric LaTiO3x5 thin films
J. Fompeyrine, J.W. Seo, J.P. Locquet
Journal of the European Ceramic Society 19(6), 1493-1496, Elsevier, 1999


1998

Microstructural investigation of La2Ti2O7 thin films grown by MBE
Jeongwoo Seo, J Fompeyrine, Jean-Pierre Locquet
SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, pp. 326--333, 1998

Doubling the critical temperature of La1.9Sr0.1CuO4 thin films using epitaxial strain.
J.P. Locquet, J. Fompeyrine, E. Mächler, J. Perret, JW Seo
APS March Meeting Abstracts, pp. 3506, 1998

Microstructural investigation of La1.9Sr0.1CuO4 thin films grown by MBE
J. Seo, J. Perret, J. Fompeyrine, G. Van Tendeloo, J.P. Locquet
SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, pp. 300-309, 1998

Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain
J.P. Locquet, J. Perret, J. Fompeyrine, E. Mächler, J.W. Seo, G. Van Tendeloo
Nature 394(6692), 453-456, Nature Publishing Group, 1998

Local determination of the stacking sequence of layered materials
J. Fompeyrine, R. Berger, HP Lang, J. Perret, E. Mächler, C. Gerber, J.P. Locquet
Applied Physics Letters 72(14), 1697-1699, AIP, 1998


1996

Electrochemical Modification of La2CuO4: The Role Played by Microstructure
EJ Williams, A. Daridon, F. Arrouy, J. Fompeyrine, E. Mächler, H. Siegenthaler, J.P. Locquet
MRS Proceedings, 1996