Ingmar Meijer  Ingmar Meijer photo       

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Senior Technical Staff Member
IBM Research--Zurich, Switzerland
  +41dash44dash7248927

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2015

Disassemblable Electronic Assembly with Leak-Inhibiting Coolant Capillaries
T. J. Brunschwiler, E.G. Colgan, M. J. Ellsworth, W. Escher, G. I. Meijer, S. Paredes, G. Schlottig, J. A. Zitz
United States Patent US 9,066,460

Electronic assembly with detachable coolant manifold and coolant-cooled electronic module
T. J. Brunschwiler, E.G. Colgan, M. J. Ellsworth, W. Escher, G. I. Meijer, S. Paredes, G. Schlottig, M. Witzig, J. A. Zitz
United States Patent US 8,937,810


2014

Liquid-cooled memory system having one cooling pipe per pair of DIMMs
G. I. Meijer, D. I. Schmidt, M. E. Steinke, J. S. Womble
United States Patent US 8,659,897


2013

Logic element, and integrated circuit or field programmable gate array
S. F. Karg, G. I. Meijer
United States Patent US 8,405,124

Field-enhanced programmable resistance memory cell
C. H. Lam, G. I. Meijer, H. S. P. Wong
United States Patent US 8,377,789

Programmable element, and memory device or logic circuit
S. F. Karg, G. I. Meijer
United States Patent US 8,470,676


2012

Switchable element
S.F. Karg, G. I. Meijer
United States Patent US 8,159,855

Programmable device
S, F. Karg, G. I. Meijer
United States Patent US 8,139,389

Memory cell and select element
S. F. Karg, G. I. Meijer
United States Patent US 8,279,665


2011

Non-volatile programmable optical element employing F-centers
G. I. Meijer, T. H. C. Stoeferle
United States Patent US 8,054,669

Non-volatile resistance switching memory
R. Allenspach, J. G. Bednorz, C. H. Lam, G. I. Meijer, R. Stutz, D. Widmer
United States Patent US 7,923,263

Non-volatile resistance switching memory
R. Allenspach, J. G. Bednorz, C. H. Lam, G. I. Meijer, R. Stutz, D. Widmer
United States Patent US 7,897,957

Electro-optical memory cell
G. I. Meijer, P. A. Moskowitz, T. H. C. Stoeferle
United States Patent US 7,933,483

Programmable device
S. F. Karg, G. I. Meijer
United States Patent US 7,961,493

Non-volatile resistance switching memory
R. Allenspach, J. G. Bednorz, C. H. Lam, G. I. Meijer, R. Stutz, D. Widmer
United States Patent US 7,897,411

Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide
C. H. Lam, G. I. Meijer, A. G. Schrott
United States Patent US 8,012,793

Programmable-resistance memory cell
J. G. Bednorz, S. F. Karg, G. I. Meijer
United States Patent US 7,872,901


2010

Programmable-resistance memory cell
S. F. Karg, G. I. Meijer
United States Patent US 7,723,714

Simultaneous conditioning of a plurality of memory cells through series resistors
T. Furukawa, M. C. Hakey, S. J. Holmes, D. V. Horak, C. W. Koburger, C. H. Lam, G. I. Meijer
United States Patent US 7,834,384

Electro-optical device
G. I. Meijer, T. H. C. Stoeferle
United States Patent US 7,724,999

Phase change material with filament electrode
M. J. Breitwisch, R. W. Cheek, E. A. Joseph, C. H. Lam, G. I. Meijer, A. G. Schrott
United States Patent US 7,851,323

Field-enhanced programmable resistance memory cell
C. H. Lam, G. I. Meijer, H. S. P. Wong
United States Patent US 7,791,141

Memory cell and memory device
S. F. Karg, G. I. Meijer
United States Patent US 7,825,486

Programmable-resistance memory cell
J. G. Bednorz, E. A. Joseph, S. F. Karg, C. H. Lam, G. I. Meijer, A. G. Schrott
United States Patent US 7,834,339


2009

Non-volatile programmable optical element with absorption coefficient modulation
G. I. Meijer, T. H. C. Stoeferle
United States Patent US 7,580,596

Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
T. Furukawa, M. C. Hakey, S. J. Holmes, D. V. Horak, C. W. Koburger, C. H. Lam, G. I. Meijer
United States Patent US 7,541,608

Phase change material with filament electrode
M. J. Breitwisch, R. W. Cheek, E. A. Joseph, C. H. Lam, G. I. Meijer, A. G. Schrott
United States Patent US 7,560,721

Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide
C. H. Lam, G. I. Meijer, A. G. Schrott
United States Patent US 7,579,611

Nonvolatile programmable resistor memory cell
S. F. Karg, G. I. Meijer
United States Patent US 7,569,459


2008

Programmable non-volatile resistance switching device
S. F. Alvarado, J. G. Bednorz, G. I. Meijer
United States Patent US 7,465,952

Field effect device with a channel with a switchable conductivity
G. J. Bednorz, D. J. Gundlach, S. F. Karg, G. I. Meijer, H. E. Riel, W. H. Riess
United States Patent US 7,466,579

Non-volatile memory architecture employing bipolar programmable resistance storage elements
J. G. Bednorz, C. H. Lam, G. I. Meijer
United States Patent US 7,324,366

Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
T. Furukawa, M. C. Hakey, S. J. Holmes, D. V. Horak, C. W. Koburger, C. H. Lam, G. I. Meijer
United States Patent US 7,378,678

Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
J. G. Bednorz, J. K. DeBrosse, C. H. Lam, G. I. Meijer, J. Z. Sun
United States Patent US 7,376,006


2007

Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
T. Furukawa, M. C. Hakey, S. J. Holmes, D. V. Horak, C. W. Koburger, C. H. Lam, G. I. Meijer
United States Patent US 7,256,415


2006

Switchable capacitance and nonvolatile memory device using the same
G. J. Bednorz, D. J. Gundlach, G. I. Meijer, W. H. Riess
United States Patent US 6,990,008

Field effect device with a channel with a switchable conductivity
G. J. Bednorz, D. J. Gundlach, S. F. Karg, G. I. Meijer, H. E. Riel, W. H. Riess
United States Patent US 7,130,212


2004

Method for manufacturing an optical device with a defined total device stress
G. L. Bona, R. Germann, G. I. Meijer, B. J. Offrein, H. W. M. Salemink, D. W. Wiesmann
United States Patent US 6,768,857

Method for manufacturing an optical device with a defined total device stress
G. L. Bona, R. Germann, G. I. Meijer, B. J. Offrein, H. W. M. Salemink, D. W. Wiesmann
United States Patent US 6,782,177


2003

Magnetic element, memory device and write head
R. Allenspach, J. G. Bednorz, G. I. Meijer
United States Patent US 6,621,732