Min Yang  Min Yang photo       

contact information

Research Staff Member, Master Inventor
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash4922

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Professional Associations

Professional Associations:  IEEE Electron Devices Society (EDS)


2009

MEMORY CELL HAVING A BURIED PHASE CHANGE REGION AND METHOD FOR FABRICATING THE SAME
H Lung, C H Lam, M Yang, A G Schrott
2009 - freepatentsonline.com

MEMORY ARRAY WITH DIODE DRIVER AND METHOD FOR FABRICATING THE SAME
H Lung, M Yang, T D Happ, B Rajendran
2009 - freepatentsonline.com


2008

High-performance CMOS devices on hybrid crystal oriented substrates
B B Doris, K W Guarini, M Ieong, S Narasimha, K Rim, J W Sleight, M Yang, others
US Patent ..., 2008 - Google Patents, Google Patents
US Patent 7,329,923

CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding
M Ieong, A Reznicek, M Yang
US Patent 7,364,958, 2008 - Google Patents, Google Patents
US Patent 7,364,958


2007

Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement
K Bernstein, J W Sleight, M Yang
US Patent App. 11/859,889, 2007 - Google Patents, Google Patents
US Patent App. 11/859,889

Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levels
H Zhu, B B Doris, P J Oldiges, M Ieong, M Yang, H Chen
US Patent App. 11/ ..., 2007 - Google Patents, Google Patents
US Patent App. 11/693,377

Dual trench isolation for CMOS with hybrid orientations
V Chan, M Ieong, R Rengarajan, A Reznicek, C Sung, M Yang
US Patent App. 11/ ..., 2007 - Google Patents, Google Patents
US Patent App. 11/877,048

HIGH-PERFORMANCE CMOS SOI DEVICES ON HYBRID CRYSTAL-ORIENTED SUBSTRATES
B B Doris, K W Guarini, M Ieong, S Narasimha, K Rim, J W Sleight, M Yang
US Patent App. 11/ ..., 2007 - Google Patents, Google Patents
US Patent App. 11/958,877

Novel lithography-independent pore phase change memory
M Breitwisch, T Nirschl, CF Chen, Y Zhu, MH Lee, M Lamorey, GW Burr, E Joseph, A Schrott, JB Philipp, others
VLSI Technology, 2007 IEEE Symposium on, pp. 100--101


2006

Hybrid orientation SOI substrates, and method for forming the same
M Ieong, X Wang, M Yang
US Patent App. 11/411,280, 2006 - Google Patents, Google Patents
US Patent App. 11/411,280

Structure and method for manufacturing planar SOI substrate with multiple orientations
H Zhu, B B Doris, M Ieong, P J Oldiges, M Yang
US Patent App. 11/ ..., 2006 - Google Patents, Google Patents
US Patent App. 11/473,835

COMPRESSIVE SIGE< 110> GROWTH MOSFET DEVICES
K K CHAN, K W GUARINI, M IEONG, K RIM, M YANG
WO Patent WO/2006/ ..., 2006 - wipo.int
WO Patent WO/2006/002,410

Strained silicon CMOS on hybrid crystal orientations
K K Chan, M Ieong, A Reznicek, D K Sadana, L Shi, M Yang
US Patent App. 11/ ..., 2006 - Google Patents, Google Patents
US Patent App. 11/492,271

ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN 110 UNDER BIAXIAL COMPRESSIVE STRAIN
V Chan, M V Fischetti, J M Hergenrother, M Leong, R Rengarajan, A Reznicek, P Solomon, C Sung, M Yang
2006 - freepatentsonline.com

Hybrid-orientation technology (HOT): opportunities and challenges
M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, E Gusev, JA Ott, LE Burns, others
IEEE Transactions on Electron Devices 53(5), 965--978, 2006


2005

On the scalability and carrier transport of advanced CMOS devices
M Icong, L Chang, V Chan, B Doris, H Shang, M Yang, S Zafar
Integrated Circuit Design and Technology, 2005, pp. 175--178

Strain for CMOS performance Improvement
V Chan, S Y R M Y Way, T M Y Qiqing
Custom Integrated Circuits Conference, 2005, pp. 667--674

Silicon-on-insulator MOSFETs with hybrid crystal orientations
M Yang, K Chan, A Kumar, S H Lo, J Sleight, L Chang, R Rao, S Bedell, A Ray, J Ott, others
VLSI Technology, 2006, pp. R--Meyer, 2005

Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
JH Stathis, R Bolam, M Yang, TB Hook, A Chou, G Larosa
Microelectronic Engineering80, 126--129, Elsevier, 2005

A comparative study of NBTI as a function of Si substrate orientation and gate ...
S Zafar, M Yang, E Gusev, A Callegari, J Stathis, T Ning, R Jammy, M Ieong
2005 IEEE VLSI-TSA International Symposium on VLSI Technology, 2005, pp. 128--129

Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
Q Ouyang, M Yang, J Holt, S Panda, H Chen, H Utomo, M Fischetti, N Rovedo, J Li, N Klymko, others
VLSI Technology, 2005, pp. 28--29


2004

Self-aligned SOI with different crystal orientation using WAFER bonding and SIMOX processes
K W Guarini, M Ieong, L Shi, M Yang
US Patent App. 10/967,398, 2004 - Google Patents, Google Patents
US Patent App. 10/967,398

Compressive SiGe< 110> growth and structure of MOSFET devices
K K Chan, K W Guarini, M Ieong, K Rim, M Yang
US Patent App. 10/ ..., 2004 - Google Patents, Google Patents
US Patent App. 10/875,727

Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations
M Ieong, M Yang
US Patent App. 10/932,982, 2004 - Google Patents, Google Patents
US Patent App. 10/932,982

Method for fabricating avalanche trench photodetectors
D L Rogers, M Yang
US Patent 6,707,075, 2004 - Google Patents, Google Patents
US Patent 6,707,075

Scaling beyond conventional CMOS device
M Ieong, B Dons, J Kedzierski, Z Ren, K Rim, M Yang, H Shang
Solid-State and Integrated Circuits Technology, 2004

Silicon device scaling to the sub-10-nm regime
M Ieong, B Doris, J Kedzierski, K Rim, M Yang
Science 306(5704), 2057, AAAS, 2004

CMOS circuit performance enhancement by surface orientation optimization
L Chang, M Ieong, M Yang
IEEE Transactions on Electron Devices 51(10), 1621--1627, Institute of Electrical and Electronics Engineers, Inc, 445 Hoes Ln, Piscataway, NJ, 08854-1331, USA,, 2004

Relevance of remote scattering in gate to channel mobility of thin-oxide CMOS devices
PM Solomon, M Yang
IEEE International Electron Devices Meeting, 2004, pp. 143--146


2003

Hybrid planar and FinFET CMOS devices
B B Doris, D C Boyd, M Ieong, T S Kanarsky, J T Kedzierski, M Yang
US Patent App. 10/ ..., 2003 - Google Patents, Google Patents
US Patent App. 10/604,097

Six-band k" p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
MV Fischettia, Z Ren, PM Solomon, M Yang, K Rim
JOURNAL OF APPLIED PHYSICS 94(2), 2003


2002

Band Alignments and Band Gaps in Si--GeCSiOOl Struetures
MIN YANG, C L I N CHANG, J C STURM
Silicon-germanium carbon alloy, 1, CRC, 2002

A high-speed, high-sensitivity silicon lateral trench photodetector
M Yang, K Rim, D L Rogers, J D Schaub, J J Welser, D M Kuchta, D C Boyd, F Rodier, P A Rabidoux, J T Marsh, others
Electron Device Letters, IEEE 23(7), 395--397, IEEE, 2002


2001

Multi Gbit/s, high-sensitivity all silicon 3.3 V optical receiver using PIN lateral trench photodetector
J D Schaub, D M Kuchta, D L Rogers, M Yang, K Rim, S Zier, M Sorna
Optical Fiber Communication Conference, 2001

High speed silicon lateral trench detector on SOI substrate
M Yang, J Schaub, D Rogers, M Ritter, K Rim, J Welser, B Park
Electron Devices Meeting, 2001, pp. 24--1


2000

Doped vs. undoped Si1- x- yGexCy layers in sub-100 nm vertical p-channel MOSFETs
M Yang, JC Sturm
Thin Solid Films 369(1-2), 366--370, Elsevier, 2000

Phosphorus doping and sharp profiles in silicon and silicon-germanium epitaxy by rapid thermal chemical vapor deposition
M Yang, M Carroll, JC Sturm, T B{\"u}y{\"u}klimanlib
Journal of The Electrvchemical Society 147(9), 3541--3545, 2000


1999

25-nm p-channel vertical MOSFET's with SiGeC Source-Drains
M Yang, C L Chang, M Carroll, JC Sturm
IEEE Electron Device Letters 20(6), 301--303, Institute of Electrical and Electronics Engineers, Inc, 445 Hoes Ln, Piscataway, NJ, 08854-1331, USA,, 1999


1997