James H. (Jim) Stathis  James H. (Jim) Stathis photo       

contact information

Science and Technology Operations and Strategy
Thomas J. Watson Research Center, Yorktown Heights, NY USA
  +1dash914dash945dash2559

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Professional Associations

Professional Associations:  American Physical Society (APS)  |  IEEE Electron Devices Society (EDS)


2017

Applications of clustering model to bimodal distributions for dielectric breakdown
Wu, Ernest Y and Bolam, Ronald and Filippi, Ronald and Stathis, James H and Li, Baozhen and Kim, Andrew
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35(1), 01A112, AVS, 2017
Abstract


2016

Fundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applications
Wu, Ernest and Stathis, James and Li, Baozhen and Kim, Andrew and Linder, Barry and Bolam, Ronald and Bonilla, Griselda
Reliability Physics Symposium (IRPS), 2016 IEEE International, pp. 3A--1
Abstract

Hot carrier effect in ultra-scaled replacement metal gate Si ix Ge x channel p-FinFETs
Wang, Miaomiao and Miao, Xin and Stathis, James H and Southwick, Richard and Linder, Barry P and Liu, Derrick and Bao, Ruqiang and Watanabe, Koji
Electron Devices Meeting (IEDM), 2016 IEEE International, pp. 15--4
Abstract


2015

Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET
Wang, Miaomiao and Liu, Zuoguang and Yamashita, Tenko and Stathis, James H and Chen, Chia-yu
Reliability Physics Symposium (IRPS), 2015 IEEE International, pp. 4A--5
Abstract

A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL)
Wu, Ernest and Stathis, James and Li, Baozhen and Linder, Barry and Zhao, Kai and Bonilla, Griselda
Reliability Physics Symposium (IRPS), 2015 IEEE International, pp. 2A--2
Abstract


2014

Reliability challenges for the 10nm node and beyond
Stathis, James H and Wang, M and Southwick, RG and Wu, EY and Linder, BP and Liniger, EG and Bonilla, G and Kothari, H
Electron Devices Meeting (IEDM), 2014 IEEE International, pp. 20--6
Abstract

Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-$\kappa$ spacer dielectrics
RG Southwick, R Sathiyanarayanan, M Bajaj, S Mehta, T Yamashita, S Gundapaneni, RK Pandey, E Wu, KVRM Murali, S Cohen, others
Reliability Physics Symposium, 2014 IEEE International, pp. BD--2

NBTI and PBTI in HKMG
Kai Zhao, Siddarth Krishnan, Barry Linder, James H Stathis
Bias Temperature Instability for Devices and Circuits, pp. 561--584, Springer, 2014

The resilience wall: Cross-layer solution strategies
Subhasish Mitra, Pradip Bose, Eric Cheng, Chen-Yong Cher, Hyungmin Cho, Rajiv Joshi, Young Moon Kim, Charles R Lefurgy, Yanjing Li, Kenneth P Rodbell, others
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program-2014 International Symposium on, pp. 1--11


Spatial mapping of non-uniform time-to-breakdown and physical evidence of defect clustering
Ernest Y Wu, Baozhen Li, James H Stathis, Barry Linder, Thomas Shaw
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on, pp. 1--2

10nm FINFET technology for low power and high performance applications
D. Guo, H Shang, Kazuyuki Seo, B Haran, T Standaert, Deepika Gupta, E Alptekin, D Bae, G Bae, D Chanemougame, others
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on, pp. 1--4

Multiple breakdown phenomena and modeling for non-uniform dielectric systems
Ernest Wu, Baozhen Li, James H Stathis, Ravi Achanta
Electron Devices Meeting (IEDM), 2014 IEEE International, pp. 34--7


2013


Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
Ernest Y Wu, Baozhen Li, James H Stathis
Applied Physics Letters 103(15), 152907, AIP Publishing, 2013

A time-dependent clustering model for non-uniform dielectric breakdown
E Wu, B Li, JH Stathis, R Achanta, R Filippi, P McLaughlin
International Electron Devices Meeting, 2013


2012

Bias temperature instability in High-$\kappa$/metal gate transistors-Gate stack scaling trends
Krishnan, Siddarth and Narayanan, Vijay and Cartier, Eduard and Ioannou, Dimitris and Zhao, Kai and Ando, Takashi and Kwon, Unoh and Linder, Barry and Stathis, James and Chudzik, Michael and others
Reliability Physics Symposium (IRPS), 2012 IEEE International, pp. 5A--1
Abstract

Keynote Address: Device reliability physics: Past, present, and future
James Stathis
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International, pp. ix--ix

DG summary: FEOL discussion
Jim Stathis, Richard Southwick
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International, pp. 216--216

Min-log approach to modeling dielectric breakdown data
Emmanuel Yashchin, Baozhen Li, James Stathis, Ernest Wu
Reliability Physics Symposium (IRPS), 2012 IEEE International, pp. GD--4

Bias temperature instability in High-$\kappa$/metal gate transistors-Gate stack scaling trends
Siddarth Krishnan, Vijay Narayanan, Eduard Cartier, Dimitris Ioannou, Kai Zhao, Takashi Ando, Unoh Kwon, Barry Linder, James Stathis, Michael Chudzik, others
Reliability Physics Symposium (IRPS), 2012 IEEE International, pp. 5A--1

Detailed study of fast transient relaxation of Vt instability in HKMG nFETs
K Zhao, J Stathis, E Cartier, M Wang, H Jagannathan, S Zafar
Reliability Physics Symposium (IRPS), 2012 IEEE International, pp. XT--14


2011

Analysis of recoverable and non-recoverable NBTI and PBTI using AC and DC stresses
Frederic Monsieur, Eduard Cartier, James Stathis
Reliability Physics Symposium (IRPS), 2011 IEEE International, pp. XT--7

Full metal gate with borderless contact for 14 nm and beyond
S-C Seo, LF Edge, S Kanakasabapathy, M Frank, A Inada, L Adam, MM Wang, K Watanabe, P Jamison, K Ariyoshi, others
VLSI Technology (VLSIT), 2011 Symposium on, pp. 36--37

Mechanistic understanding of breakdown and bias temperature instability in high-K metal devices using inline fast ramped bias test
Siddarth A Krishnan, Eduard Cartier, James Stathis, Michael Chudzik, Andreas Kerber
Reliability Physics Symposium (IRPS), 2011 IEEE International, pp. 4A--5

A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS
DP Ioannou, K Zhao, A Bansal, B Linder, R Bolam, E Cartier, J-J Kim, R Rao, G La Rosa, G Massey, others
Reliability Physics Symposium (IRPS), 2011 IEEE International, pp. CR--1

PBTI under dynamic stress: From a single defect point of view
K Zhao, JH Stathis, BP Linder, E Cartier, A Kerber
Reliability Physics Symposium (IRPS), 2011 IEEE International, pp. 4A--3

PBTI/NBTI monitoring ring oscillator circuits with on-chip Vt characterization and high frequency AC stress capability
Jae-Joon Kim, Rahul M Rao, Jeremy Schaub, Amlan Ghosh, Aditya Bansal, Kai Zhao, Barry P Linder, James Stathis
VLSI Circuits (VLSIC), 2011 Symposium on, pp. 224--225

Fundamental aspects of HfO 2-based high-k metal gate stack reliability and implications on t inv-scaling
E Cartier, A Kerber, T Ando, MM Frank, K Choi, S Krishnan, B Linder, K Zhao, F Monsieur, J Stathis, others
Electron Devices Meeting (IEDM), 2011 IEEE International, pp. 18--4

A Manufacturable Dual Channel (Si and SiGe) High-K Metal Gate CMOS Technology with Multiple Oxides for High Performance and Low Power Applications
S. Krishnan, U. Kwon, N. Moumen, M. Stoker, E. C. Harley, S. W. Bedell, D. R. Nair, B. J. Greene, W. K. Henson, M. M. Chowdhury, D. P. Prakash, E. Wu, D. P. Ioannou, E. Cartier, M.-h. Na, S. Inumiya, K. Mcstay, L. Edge, R. Iijima, J. Cai, M. Frank, M. Har
International Electron Devices Meeting, pp. 28-1, 2011


2010

Reliability of advanced high-k/metal-gate n-FET devices
James H Stathis, M Wang, K Zhao
Microelectronics Reliability 50(9), 1199--1202, Elsevier, 2010

PBTI relaxation dynamics after AC vs. DC stress in high-k/metal gate stacks
K Zhao, JH Stathis, A Kerber, E Cartier
Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 50--54

Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation
S C Seo, C C Yang, M Wang, F Monsieur, L Adam, J B Johnson, D Horak, S Fan, K Cheng, J Stathis, others
Electron Device Letters, IEEE 31(12), 1452--1454, IEEE, 2010

High-K gate stack breakdown statistics modeled by correlated interfacial layer and high-k breakdown path
G Ribes, P Mora, F Monsieur, M Rafik, F Guarin, G Yang, D Roy, WL Chang, J Stathis
Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 364--368

Role of interface layer in stress-induced leakage current in high-k/metal-gate dielectric stacks
WL Chang, JH Stathis, E Cartier
Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 787--791

HOT-carrier degradation in undoped-body ETSOI FETS and SOI FINFETS
M. Wang, P. Kulkarni, K. Cheng, A. Khakifirooz, VS Basker, H. Jagannathan, C.C. Yeh, V. Paruchuri, B. Doris, H. Bu, others
Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 1099--1104


2009

The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability
Linder, Barry P and Cartier, Eduard and Krishnan, Siddarth and Stathis, James H and Kerber, Andreas
Reliability Physics Symposium, 2009 IEEE International, pp. 510--513
Abstract

The Dielectric Breakdown in Gate Oxides under High Field Stress
Salvatore A Lombardo, James H Stathis, Gennadi Bersuker
ECS Transactions 19(2), 177--194, The Electrochemical Society, 2009

Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
K Choi, Hi Jagannathan, C Choi, L Edge, T Ando, M Frank, P Jamison, M Wang, E Cartier, S Zafar, others
VLSI Technology, 2009 Symposium on, pp. 138--139

Copper contact metallization for 22 nm and beyond
Soon-Cheon Seo, Chih-Chao Yang, Chun-Chen Yeh, Bala Haran, Dave Horak, Susan Fan, Charles Koburger, Donald Canaperi, SS Papa Rao, Frederic Monsieur, others
Interconnect Technology Conference, 2009. IITC 2009. IEEE International, pp. 8--10

Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability
Aditya Bansal, Rahul Rao, Jae-Joon Kim, Sufi Zafar, James H Stathis, Ching-Te Chuang
Microelectronics reliability 49(6), 642--649, Elsevier, 2009


Recovery study of negative bias temperature instability
M Wang, S Zafar, J H Stathis
Microelectronic Engineering, Elsevier, 2009

Impact of NBTI and PBTI in SRAM bit-cells: Relative sensitivities and guidelines for application-specific target stability/performance
Aditya Bansal, Rahul Rao, Jae-Joon Kim, Sufi Zafar, James H Stathis, Ching-Te Chuang
Reliability Physics Symposium, 2009 IEEE International, pp. 745--749


2008

A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
Roberto Pagano, Salvatore Lombardo, Felix R Palumbo, Stefania Carloni, Paul Kirsch, Siddarth Krishnan, Chadwin Young, Rino Choi, Gennadi Bersuker, James Stathis
ECS Transactions 14(1), 303--309, The Electrochemical Society, 2008

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
R Pagano, S Lombardo, F Palumbo, P Kirsch, SA Krishnan, C Young, R Choi, G Bersuker, JH Stathis
Microelectronics Reliability 48(11-12), 1759--1764, Elsevier, 2008


2007

High-Performance High-k/Metal Gates for 45nm CMOS and Beyond with Gate-First Processing
M Chudzik, B Doris, R Mo, J Sleight, E Cartier, C Dewan, D Park, H Bu, W Natzle, W Yan, others
2007 IEEE Symposium on VLSI Technology, pp. 194--195

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
J Mart{'i}n-Mart{'i}nez, R Rodr{'i}guez, M Nafr{'i}a, X Aymerich, JH Stathis
Microelectronics Reliability 47(4-5), 665--668, Elsevier, 2007

Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
E Amat, R Rodr{'i}guez, M Nafr{'i}a, X Aymerich, JH Stathis
Microelectronics Reliability 47(4-5), 544--547, Elsevier, 2007


2006

Charge Trapping \& NBTI in High k Gate Dielectric Stacks
Sufi Zafar, Alessando Callegari, James Stathis
ECS Transactions 1(5), 591--605, The Electrochemical Society, 2006

A Statistical Mechanics Model for NBTI in Oxides
Sufi Zafar, James Stathis, Alessando Callegari, Tak Ning
Meeting Abstracts, pp. 736--736, 2006

Gate oxide reliability for nano-scale CMOS
JH Stathis
Microelectronics, 2006 25th International Conference on, pp. 78--83

A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates
S Zafar, YH Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, A Callegari, M Chudzik
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on, pp. 23--25

Band-edge high-performance high-k/metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
V Narayanan, VK Paruchuri, NA Bojarczuk, BP Linder, B Doris, YH Kim, S Zafar, J Stathis, S Brown, J Arnold, others
VLSI Technology, 2006, pp. 178--179

Hybrid-orientation technology (HOT): opportunities and challenges
M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, E Gusev, JA Ott, LE Burns, others
IEEE Transactions on Electron Devices 53(5), 965--978, 2006

The negative bias temperature instability in MOS devices: A review
JH Stathis, S Zafar
Microelectronics Reliability 46(2-4), 270--286, Elsevier, 2006


2005

Dielectric breakdown mechanisms in gate oxides
S Lombardo, J H Stathis, B P Linder, K L Pey, F Palumbo, C H Tung
Journal of Applied Physics98, 121301, 2005

Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
JH Stathis, R Bolam, M Yang, TB Hook, A Chou, G Larosa
Microelectronic Engineering80, 126--129, Elsevier, 2005

A comparative study of NBTI as a function of Si substrate orientation and gate ...
S Zafar, M Yang, E Gusev, A Callegari, J Stathis, T Ning, R Jammy, M Ieong
2005 IEEE VLSI-TSA International Symposium on VLSI Technology, 2005, pp. 128--129

Impact of ultra thin oxide breakdown on circuits
JH Stathis
Integrated Circuit Design and Technology, 2005, pp. 123--127


2004

A model for negative bias temperature instability (NBTI) in oxide and high/spl kappa/pFETs 13/spl times/-C6D8C7F5F2
Zafar, Sufi and Lee, Byoung H and Stathis, James and Callegari, Allesandro and Ning, Tak
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on, pp. 208--209
Abstract

Breakdown transients in ultra-thin gate oxynitrides
S Lombardo, F Palumbo, JH Stathis, BP Linder, KL Pey, CH Tung
Integrated Circuit Design and Technology, 2004. ICICDT'04. International Conference on, pp. 355--362

Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
F Palumbo, S Lombardo, JH Stathis, V Narayanan, FR McFeely, JJ Yurkas
IEEE international reliability physics symposium, pp. 122--125, 2004

Evaluation of NBTI in HfO
S Zafar, B H Lee, J Stathis
IEEE Electron Device Letters 25(3), 153, 2004

a-SiGe: H and a-SiGeC: H black-matrix films for Liquid Crystal Displays
Y K Y K Y MIYOSHI, M A J STATHIS
Japanese Journal of Applied Physics 43(no. 1), 30--34, 万方数据资源系统, 2004

A model for negative bias temperature instability (NBTI) in oxide and high-kappa pFETs
S Zafar, BH Lee, J Stathis, A Callegari, T Ning
VLSI Technology, 2004, pp. 208--209

Reliability of MOS devices with tungsten gates
F Palumbo, S Lombardo, JH Stathis, V Narayanan, FR McFeely, JJ Yurkas
Microelectronic engineering 72(1), 45--49, Elsevier, 2004

Effect and model of gate oxide breakdown on CMOS inverters
R Rodr{i}́guez, JH Stathis, BP Linder
Microelectronic Engineering 72(1-4), 34--38, Elsevier, 2004

Statistics of progressive breakdown in ultra-thin oxides
BP Linder, JH Stathis
Microelectronic Engineering 72(1-4), 24--28, Elsevier, 2004

Broad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide
JH Stathis, G LaRosa, A Chou
2004 IEEE International Reliability Physics Symposium Proceedings, 2004, pp. 1--7

Evaluation of NBTI in HfO/sub 2/gate-dielectric stacks with tungsten gates
S Zafar, BH Lee, J Stathis
IEEE Electron Device Letters 25(3), 153--155, 2004


2003

Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
R Rodriguez, JH Stathis, BP Linder
Reliability Physics Symposium Proceedings, 2003, pp. 11--16

Threshold in the degradation rate during breakdown transients of ultra-thin gate oxides
S Lombardo, JH Stathis, BP Linder
WODIM: workshop on dielectrics in microelectronics, pp. 25--28, 2003

A model for gate-oxide breakdown in CMOS inverters
R Rodriguez, JH Stathis, BP Linder
IEEE Electron Device Letters 24(2), 114--116, 2003

Oxide Breakdown Model and its Impact on SRAM Cell Functionality
RV Joshi, JH Stathis, CT Chuang
International Conference on Simulation of Semiconductor Processes and Devices, pp. 283, 2003

Influence and model of gate oxide breakdown on CMOS inverters
R Rodr{i}́guez, JH Stathis, BP Linder, RV Joshi, CT Chuang
Microelectronics Reliability 43(9-11), 1439--1444, Elsevier, 2003


Growth and scaling of oxide conduction after breakdown
BP Linder, JH Stathis, DJ Frank, S Lombardo, A Vayshenker
2003 IEEE International Reliability Physics Symposium Proceedings, 2003, pp. 402--405

Reliability of ultra-thin oxides in CMOS circuits
JH Stathis, BP Linder, R Rodr{i}́guez, S Lombardo
Microelectronics Reliability 43(9-11), 1353--1360, Elsevier, 2003

Circuit implications of gate oxide breakdown
JH Stathis, R Rodr{i}́guez, BP Linder
Microelectronics Reliability 43(8), 1193--1197, Elsevier, 2003

Breakdown transients in ultrathin gate oxides: Transition in the degradation rate
S Lombardo, JH Stathis, BP Linder
Physical review letters 90(16), 167601, APS, 2003


2002

On the role of interface states in low-voltage leakage currents of metal--oxide--semiconductor structures
Crupi, F and Ciofi, C and Germano, A and Iannaccone, Giuseppe and Stathis, JH and Lombardo, S
Applied physics letters 80(24), 4597--4599, AIP, 2002
Abstract

The impact of gate-oxide breakdown on SRAM stability
R Rodriguez, JH Stathis, BP Linder, S Kowalczyk, CT Chuang, RV Joshi, G Northrop, K Bernstein, AJ Bhavnagarwala, S Lombardo
Electron Device Letters, IEEE 23(9), 559--561, IEEE, 2002

Degradation of thin SiO< sub> 2 gate oxides by atomic hydrogen
F Cartier, DJ DiMaria, DA Buchanan, J Stathis, WW Abadeer, R P Vollertsen
Device Research Conference, 1994, pp. 73--74, 2002

Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density
S Lombardo, F Crupi, JH Stathis
Reliability Physics Symposium, 2001, pp. 163--167, 2002

Tunneling studies of high dielectric constant thin films deposited on Si
RB Laibowitz, E Gousev, R Koch, M Fischetti, H Okorn-Schmidt, J Stathis, JR Kirtley
APS Meeting Abstracts, pp. 18006, 2002

Dependence of Post-Breakdown Conduction on Gate Oxide Thickness
S Lombardo, JH Stathis, BP Linder
Microelectronics Reliability 42(9-11), 1481--1484, Elsevier, 2002

Analysis of the effect of the gate oxide breakdown on SRAM stability
R Rodr{i}́guez, JH Stathis, BP Linder, S Kowalczyk, CT Chuang, RV Joshi, G Northrop, K Bernstein, AJ Bhavnagarwala, S Lombardo
Microelectronics Reliability 42(9-11), 1445--1448, Elsevier, 2002

Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
BP Linder, S Lombardo, JH Stathis, A Vayshenker, DJ Frank
IEEE Electron Device Letters 23(11), 661--663, 2002

Reliability limits for the gate insulator in CMOS technology
J H Stathis
IBM Journal of Research and Development 46(2-3), 265--286, 2002


2001

Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
Stathis, James H
IEEE Transactions on Device and Materials Reliability 1(1), 43--59, IEEE, 2001
Abstract



Calculating the error in long term oxide reliability estimates
BP Linder, JH Stathis, DJ Frank
2001 IEEE International Reliability Physics Symposium, 2001, pp. 168--171

Transistor-limited constant voltage stress of gate dielectrics
BP Linder, DJ Frank, JH Stathis, SA Cohen
VLSI Technology, 2001, pp. 93--94


2000

Breakdown measurements of ultra-thin sio/sub 2/at low voltage
Stathis, JH and Vayshenker, A and Varekamp, PR and Wu, EY and Montrose, C and McKenna, J and DiMaria, DJ and Han, L-K and Cartier, E and Wachnik, RA and others
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on, pp. 94--95
Abstract

Defect generation and reliability of ultra-thin SiO2 at low voltage
JH Stathis, DJ DiMaria
The Physics and Chemistry of SiO2 and the Si--SiO2 Interface4, 2000--2

Characterization of Defects in Silicon Dioxide Films Using a Photoluminescence Spectroscopy.
H NISHIKAWA, JH STATHIS
Papers of Technical Meeting on Dielectrics and Electrical Insulation, IEE Japan, pp. 11--20, 2000

Gate oxide breakdown under current limited constant voltage stress
BP Linder, JH Stathis, RA Wachnik, E Wu, SA Cohen, A Ray, A Vayshenker
VLSI Technology, 2000, pp. 214--215

Ultra-thin oxide reliability for ULSI applications
E Y Wu, J H Stathis, L K Han
Semiconductor Science and Technology15, 425--435, Institute of Physics Publishing, 2000


1999


Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
DJ DiMaria, JH Stathis
Applied physics letters 74(12), 1752--1754, AIP Publishing, 1999

Oxide scaling limit for future logic and memory technology
JH Stathis, DJ DiMaria
Microelectronic Engineering 48(1-4), 395--401, Elsevier, 1999


Percolation models for gate oxide breakdown
JH Stathis
Journal of Applied Physics86, 5757, 1999

Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy
H Nishikawa, R E Stahlbush, J H Stathis
Physical Review B 60(23), 15910--15918, APS, 1999

Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs
P E Bl{\"o}chl, J H Stathis
Physica B: Physics of Condensed Matter273, 1022--1026, Elsevier, 1999

Hydrogen electrochemistry and stress-induced leakage current in silica
P E Bl{\"o}chl, J H Stathis
Physical Review Letters 83(2), 372--375, APS, 1999


1998

APPLIED PHYSICS REVIEWS
Lombardo, Salvatore and Stathis, James H and Linder, Barry P and Pey, Kin Leong and Palumbo, Felix and Tung, Chih Hang
J. Appl. Phys 84(10), 1998
Abstract

Interface state capture cross section measurements on vacuum annealed and radiation damaged Si: SiO2 surfaces
MJ Uren, V Nayar, KM Brunson, CJ Anthony, JH Stathis, E Cartier
Journal of the Electrochemical Society 145(2), 683--689, The Electrochemical Society, 1998



Electrical Defects at the SiO2/Si Interface Studied by EPR
J H STATHIS
Fundamental aspects of ultrathin dielectrics on Si-based devices, 325, Kluwer Academic Pub, 1998

Reliability projection for ultra-thin oxides at low voltage
JH Stathis, DJ DiMaria
Electron Devices Meeting, 1998, pp. 167--170


1997

Potential fluctuations due to Pb centres at the SiSiO2 interface
Uren, MJ and Brunson, KM and Stathis, JH and Cartier, E
Microelectronic engineering 36(1-4), 219--222, Elsevier, 1997
Abstract

On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
DA Buchanan, JH Stathis, E Cartier, DJ DiMaria
Microelectronic Engineering 36(1-4), 329--332, Elsevier, 1997

Comment on'Creation of interface defects in thermal through annealing'
JH Stathis
Journal of Physics: Condensed Matter9, 3297--3298, Institute of Physics Publishing, 1997


Ultimate limit for defect generation in ultra-thin silicon dioxide
DJ DiMaria, JH Stathis
Applied Physics Letters71, 3230, 1997

Control and modification of nematic liquid crystal pretilt angles on polyimides
K W Lee, A Lien, J H Stathis, S H Paek
Japanese Journal of Applied Physics 36(part 1), 3591--3597, 1997

Quantitative model of the thickness dependence of breakdown in ultra-thin oxides
JH Stathis
Microelectronic Engineering 36(1), 325--328, Elsevier, 1997


1996

Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2
Stathis, JH
Applied physics letters 68(12), 1669--1671, AIP, 1996
Abstract

Hot-electron induced passivation of silicon dangling bonds at the Si (111)/SiO2 interface
Cartier, E and Stathis, JH
Applied physics letters 69(1), 103--105, AIP, 1996
Abstract

Conductance measurements on P b centers at the (111) Si: SiO2 interface
Uren, MJ and Stathis, JH and Cartier, E
Journal of applied physics 80(7), 3915--3922, AIP, 1996
Abstract



1995

Erratum:‘‘Dissociation kinetics of hydrogen-passivated(100) Si/SiO 2 interface defects’’[J. Appl. Phys. 77, 6205(1995)]
Stathis, JH
Journal of Applied Physics 78(8), 5215, New York, NY: American Institute of Physics, c1937-, 1995
Abstract

Dissociation kinetics of hydrogen-passivated (100) Si/SiO2 interface defects
Stathis, JH
Journal of applied physics 77(12), 6205--6207, AIP, 1995
Abstract

Interface states induced by the presence of trapped holes near the silicon--silicon-dioxide interface
DiMaria, DJ and Buchanan, DA and Stathis, JH and Stahlbush, RE
Journal of applied physics 77(5), 2032--2040, AIP, 1995
Abstract

Atomic hydrogen-induced degradation of thin SiO2 gate oxides
Cartier, E and Buchanan, DA and Stathis, JH and DiMaria, DJ
Journal of non-crystalline solids187, 244--247, Elsevier, 1995
Abstract

Atomic hydrogen-induced degradation of the Si/SiO2 structure
E Cartier, JH Stathis
Microelectronic Engineering 28(1-4), 3--10, Elsevier, 1995


1994

Guest Comment: Downsizing physics for the 90s
Stathis, James H
American Journal of Physics 62(7), 587--587, American Association of Physics Teachers, 1994
Abstract



1993

Defect Structure and Generation Mechanisms at the Si/SiO2 Interface
JH Stathis
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, pp. 393--402, Springer, 1993

Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
E Cartier, JH Stathis, DA Buchanan
Applied Physics Letters 63(11), 1510--1512, AIP, 1993

Interface defects of ultrathin rapid-thermal oxide on silicon
JH Stathis, DA Buchanan, DL Quinlan, AH Parsons, DE Kotecki
Applied Physics Letters 62(21), 2682--2684, AIP, 1993

Microscopic mechanisms of interface state generation by electrical stress
JH Stathis
Microelectronic Engineering 22(1-4), 191--196, Elsevier, 1993

New model of a common origin for trapped holes and anomalous positive charge in MOS capacitors
Y Roh, L Trombetta, J Stathis
Microelectronic Engineering 22(1-4), 227--230, Elsevier, 1993


1992

Photoinduced hydrogen loss from porous silicon
Collins, RT and Tischler, MA and Stathis, JH
Applied physics letters 61(14), 1649--1651, AIP, 1992
Abstract

17O Hyperfine Study of the Pb Center
JH Stathis, S Rigo, I Trimaille, MS Crowder
Materials Science Forum, pp. 1421--1426, 1992

Identification of an interface defect generated by hot electrons in SiO2
JH Stathis, DJ DiMaria
Applied Physics Letters 61(24), 2887--2889, AIP, 1992

Luminescence degradation in porous silicon
MA Tischler, RT Collins, JH Stathis, JC Tsang
Applied Physics Letters 60(5), 639--641, AIP, 1992


1991

Moderate-temperature anneal of 7-nm thermal SiO2 in O2-and H2O-free atmosphere: Effects on Si-SiO2 interface-trap distribution
Dori, L and Stathis, JH and Tornello, JA
Journal of applied physics 70(3), 1510--1516, AIP, 1991
Abstract

Trapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on silicon
DiMaria, DJ and Stathis, JH
Journal of applied physics 70(3), 1500--1509, AIP, 1991
Abstract

Laser Conditioning and Electronic Defects of HfO 2 and SiO 2 Thin Films
Kozlowski, Mark R and Staggs, M and Rainer, Frank and Stathis, JH
Laser-Induced Damage in Optical Materials: 1990, ASTM International, 1991
Abstract

Fundamental chemical differences among P b defects on (111) and (100) silicon
Stathis, JH and Dori, L
Applied physics letters 58(15), 1641--1643, AIP, 1991
Abstract

Optical Characteristics of Porous Silicon
MA Tischler, RT Collins, JC Tsang, JH Stathis, JL Batstone, S Zollner
MRS Proceedings, pp. 189, 1991

Response to ‘‘Comment on ‘E’centers and nitrogen-related defects in silicon dioxide films’’’
JH Stathis, J Chapple-Sokol, E Tierney, J Batey
Applied Physics Letters 59(22), 2905--2905, AIP Publishing, 1991

Oxygen interaction with defects at the Si/SiO2 interface
JH Stathis, S Rigo, I Trimaille
Solid State Communications 79(2), 119--120, Elsevier, 1991


1990

E’centers and nitrogen-related defects in SiO2 films
Stathis, JH and Chapple-Sokol, J and Tierney, E and Batey, J
Applied physics letters 56(21), 2111--2113, AIP, 1990
Abstract

Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films
Buchanan, DA and Stathis, JH and Wagner, PR
Applied physics letters 56(11), 1037--1039, AIP, 1990
Abstract

Laser conditioning and electronic defect measurements of HfO2 and SiO2 thin films
MR Kozlowski, M Staggs, F Rainer, JH Stathis
Presented at the 22nd Boulder Damage Symposium, Boulder, CO, 24-26 Oct. 1990, pp. 24--26

Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films
DA Buchanan, JH Stathis, PR Wagner
Applied Physics Letters 56(11), 1037--1039, AIP, 1990

Laser conditioning and electronic defect measurements of HfO sub 2 and SiO sub 2 thin films
MR Kozlowski, M Staggs, F Rainer, JH Stathis
1990 - osti.gov, UCRL-JC-104883, Lawrence Livermore National Lab., CA (USA)


1989


Observation of multiple silicon dangling bond configurations in silicon nitride
D Jousse, J Kanicki, JH Stathis
Applied Physics Letters 54(11), 1043--1045, 1989



1988

Deep trench structures in silicon for sensitivity enhancement of Si/SiO2 interface studies
Jo H Stathis, E Bassous, BA Scott
Applied physics letters 53(9), 794--795, AIP Publishing, 1988

Identification of Native Defects in a-SiO2
JH Stathis
The Physics and Technology of Amorphous SiO2, pp. 141--151, Springer, 1988

Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films
D Jousse, J Kanicki, J Stathis, Y Cros
1988 Semiconductor Symposium, pp. 227--231

Neutral E centers in microwave downstream plasma-enhanced chemical-vapor-deposited silicon dioxide
WL Warren, PM Lenahan, B Robinson, JH Stathis
Applied Physics Letters 53(6), 482--484, AIP, 1988



1987

Selective generation of oriented defects in glasses: Application to SiO2
JH Stathis
Physical Review Letters 58(14), 1448--1451, APS, 1987

Time-resolved photoluminescence in amorphous silicon dioxide
JH Stathis, MA Kastner
Physical Review B 35(6), 2972--2979, APS, 1987


1985

Optically induced metastable paramagnetic centers in amorphous SiO2
Stathis, James H and Kastner, MA
Journal of Non-Crystalline Solids77, 739--742, Elsevier, 1985
Abstract


1984

Photoinduced paramagnetic centers in a-SiO2
Stathis, JH and Kastner, MA and Taylor, PC and Bishop, S G
AIP Conference Proceedings, pp. 78--85, 1984
Abstract

Vacuum-ultraviolet generation of luminescence and absorption centres in a-SiO2
Stathis, JH and Kastner, MA
Philosophical Magazine B 49(4), 357--362, Taylor & Francis, 1984
Abstract

Photoinduced paramagnetic defects in amorphous silicon dioxide
Stathis, JH and Kastner, MA
Physical Review B 29(12), 7079, APS, 1984
Abstract


1980

Elastic constants of tungsten between 4.2 and 77 K
Stathis, James H and Bolef, DI
Journal of Applied Physics 51(9), 4770--4773, AIP, 1980
Abstract