Memory & cognitive technologies - overview
Memories that constitute resistance as the state variable encompass a very broad range of materials and switching mechanisms. Of these technologies, some, namely magnetic random access memory (MRAM), phase-change memory (PCM) and reduction/oxidation (redox) memories, have received more attention from the scientific community and the semiconductor industry and are thus in a more advanced state of research and/or development.
At IBM Research – Zurich, we are pursuing yet another resistive memory concept based on carbon. Carbon-based memory could be a significant complement to the rapid advances in carbon-based nano-electronics. This could pave the way for potential all-carbon computing devices of the future. The elemental nature of carbon would enable a carbon-based memory to be scaled down to very small feature sizes and to be immune to compositional changes that typically plague alternate multi-elemental non-volatile memory materials. Moreover, the high resilience of carbon to a variety of external stimuli would ensure robustness and endurance of such a carbon-based memory.