Vijay Narayanan  Vijay Narayanan photo       

contact information

Manager and Distinguished Research Staff Member
Thomas J. Watson Research Center, Yorktown Heights, NY USA


Professional Associations

Professional Associations:  IEEE   |  Materials Research Society (MRS)


Dr. Narayanan received his B.Tech. in Metallurgical Engineering from the Indian Institute of Technology, Madras (1995), and his M.S. (1996) and Ph.D. (1999) in Materials Science and Engineering from Carnegie Mellon University where his dissertation concentrated on understanding the origins of line and planar defects during the epitaxial growth of Gallium Phosphide on different orientations of Si. In 1999, Dr. Narayanan joined the Department of Chemical and Materials Engineering at Arizona State University as a Post Doctoral Research Associate where his research focus was on the initial stages of nucleation and growth of III-V nitrides on Sapphire and Si substrates grown by MOCVD. Dr. Narayanan joined IBM in 2001, where he lead the effort at IBM research on developing thermally stable band-edge High-κ/Metal gates for integration into advanced CMOS logic. He developed fundamental methodologies for understanding dipoles within threshold voltage shifting electropositive capping layers and for understanding the role played by oxygen and oxygen vacancy defects within Hf-based high-κ gate stacks. Dr. Narayanan drove the effort to transfer these High-κ/Metal Gate processes to technology development in East Fishkill where they are in production for the 32 and 22 nm high performance node. He was awarded an IBM Research Division Award for contributions to High-κ/Metal Gates in 2006 and was recognized as an IBM Master Inventor in 2007. In 2011, He became an IEEE Senior Member and was elected a fellow of the American Physical Society. In addition, in recognition of his contributions to high-ĸ/metal gate technology, Dr. Narayanan received an IBM Corporate Award in 2013. Currently, Dr. Narayanan is a Manager and Distinguished Research Staff Member within the IBM T. J. Watson Research Center where his research interests range from High-κ/Metal Gate materials for CMOS Logic, Ferroelectric field effect transistors for low voltage applications, and Synaptic Memory Materials for Neuromorphic Computing. He is an author or co-author of over 100 journal and conference papers and holds 75 US patents.