Stephen M. Gates  Stephen M. Gates photo       

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Research Staff Member
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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Professional Associations

Professional Associations:  AVS  |  Materials Research Society (MRS)

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Dr. Gates has 25 years experience with significant accomplishments in new materials and integration for BEOL CMOS technology. He has also worked in process improvements, tailored materials, and characterization methods. He has project leadership experience including 2 joint development projects comprised of Alliance Partners, 3rd party companies, and IBM staff. He has approximately 70 issued patents. His 65 refereed publications span the areas of materials for the BEOL, chemical vapor deposition , and surface chemistry, and include 2 review articles. He is an inventor with A. Grill and V. Patel of the porous SiCOH dielectric materials that are used throughout the semiconductor industry in high performance CMOS BEOL interconnects. He is an inventor and developer of improved formulations of these porous dielectric materials. He is currently active in adding functionality to the CMOS BEOL, including simple memory cells.




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