Oki Gunawan  Oki Gunawan photo       

contact information

Research Staff Member
Thomas J. Watson Research Center, Yorktown Heights, NY USA


Professional Associations

Professional Associations:  American Physical Society  |  IEEE


Oki Gunawan received his Ph.D. and M.A. from Princeton University (Electrical Engineering) and M. Eng and B. Eng (first class) from Nanyang Technological University, Singapore (Electrical Engineering). He joined IBM in 2007 as a postdoctoral scientist and currently a Research Staff Member in Physical Science Dept. at IBM Thomas J Watson Research Center. His research activities encompass several areas like optoelectronics, valley-based electronics or “valleytronics”, nanowire device, photovoltaics (thin film device and advanced characterization) and electrodynamics.

AlAs Valeytronics Device

 At Princeton he performed one of the pioneering work in the area of valley-based electronics or "valleytronics" - the next kind of electron device technology after electronics (charge-based) and spintronics (spin-based).  The study focused on AlAs 2D electron system (a quintessential two-valley electron system) in Prof. Shayegan's group. The work was documented in Nature Physics [1], Physical Review Letters [2-4], Physical Rev. B [5-7] and summarized in his PhD thesis (link to defense presentation). During his postdoctoral period at IBM he performed the first mobility extraction in silicon CMOS nanowire device technology [8] and developed nanowire-based solar cell [9]. As a Research Staff Member he joined the thin film photovoltaic (PV) research group with focus on development of earth-abundant thin film CuZnSnSSe (CZTSSe) solar cell where IBM currently holds the world record efficiency of 12.6% [10].

At IBM he manages a PV characterization laboratory and leads efforts to develop IBM-PVX system [11], a portfolio of new systems and patents for advanced solar cell characterizations. An example of his recent invention is the IBM PDL Hall system [12-13], a high sensitivity, ac field  Hall system based on invention from different area of research: the magnetic parallel dipole line (PDL) trap system intended for self-assembly of future nanowire-based integrated circuit [12][14]. The PDL Hall system is targeted for low mobility and insulating semiconductor materials as commonly found in thin film and photovoltaic industry.

He has authored and co-authored more than 50 publications and holds 26 US and international patents and over 10 pending patent applications, 3 of them have been licensed. He received Achmad Bakrie Award 2013 (Indonesia, Young scientist category), IBM Invention Achievement Award (8th plateau), IBM Research Division Award (2010), IBM New Hire Patent Award (2009) and AT&T Asia Pacific Leadership Award (2000). He has also served as the co-leader of the Indonesian Physics Olympiad Team in the 1999 IPhO Italy, the 2000 IPhO UK and as the team leader in the 2000 APhO Indonesia.


(1) O. Gunawan, K. Vakili, T. Gokmen, E. P. De Poortere, M. Shayegan, “Spin-valley phase diagram of the two-dimensional metal insulator transition”, Nature Physics 3, 388 (2007). Special commentary: “Metal-Insulator Transition: A plane mystery”, J. H. Smet, Nature Physics  3, 370 (2007).

(2) O. Gunawan, Y. P. Shkolnikov, E. P. De Poortere, E. Tutuc, M. Shayegan, “Ballistic electron transport in AlAs quantum wells “, Phys. Rev. Lett. 93, 246 603 (2004).
(3) O. Gunawan, Y. P. Shkolnikov, K. Vakili, T. Gokmen, E. P. De Poortere, M. Shayegan, "Valley susceptibility of an interacting two-dimensional electron system", Phys. Rev. Lett. 97, 186 404 (2006).
(4) O. Gunawan, T. Gokmen, Y. P. Shkolnikov, E. P. De Poortere, M. Shayegan, “Anomalous Giant Piezoresistance in AlAs 2D Electron Systems with Antidot Lattices”, Phys. Rev. Lett. 100, 36602 (2008).
(5) O. Gunawan, B. Habib, E. P. De Poortere, M. Shayegan, “Quantized conductance in an AlAs 2D electron system quantum point contact”, Phys. Rev. B 74, 155 436 (2006).
(6) O. Gunawan, E. P. De Poortere, M. Shayegan, “AlAs 2D electrons in an antidot lattice: Electron pinball with elliptical Fermi contours”, Phys. Rev. B 75, R81304 (2007).
(7)  T. Gokmen, M. Padmanabhan, O. Gunawan, Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan, “Parallel magnetic-field tuning of valley splitting in AlAs two-dimensional electrons”, Phys. Rev. B 78, 233 306 (2008).
(8) O. Gunawan, L. Sekaric, A. Majumdar, M. Rooks, J. Appenzeller, J. W. Sleight, S. Guha, W. Haensch, “Measurement of carrier mobility in Silicon nanowires”, Nano Letters 8, 1566 (2008).
(9) O. Gunawan, S. Guha, "Characteristics of vapor-liquid-solid grown silicon nanowire solar cells", Solar Energy Materials & Solar Cells 93, 1388 (2009).
(10) W. Wang, M. T. Winkler, O. Gunawan, T. Gokmen, T. K. Todorov, Y. Zhu, D. B. Mitzi, "Device characteristics of CZTSSe thin film solar cell with 12.6% efficiency", Adv. Ener. Mater. 4, 1301465 (2014).
(11) O. Gunawan, B. Lei, "Solar cell characterization system with an automated continuous neutral density filter", US Patent 8,797,058 B2 (2014).
(12) O. Gunawan, Y. Virgus, and T. K. Fai, "A parallel dipole line system", Appl. Phys. Lett. 106, 062407 (2015).
(13) O. Gunawan, T. Gokmen, "Hall Measurement System with Rotary Magnet" US Patent 9,041,389 (2015).
(14) O. Gunawan, Q. Cao, "Magnetic trap for cylindrical diamagnetic materials", US Patent 8,895,355;  8,895,355 (2014); 9,093,377 (2015); 9,236,293 (2016); 9,263,669 (2016).

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