Professional AssociationsProfessional Associations: IEEE Solid State Circuits Society | JEDEC | Korean-American Scientiests and Engineers Association
Kyu-hyoun (KH) Kim received Ph.D. degree in Electrical and Electronic engineering from Korea Advanced Institute of Science and Technology (KAIST) in 1997. In 1998, he joined Samsung Electronics where he was involved in circuit design, product development and standardization of the high-performance dynamic RAMs such as DDR, DDR2, DDR3, Graphic memory and next-generation main memory. He was a leader of high-speed I/O circuit design and evaluation group for the development of commercial DRAM products. In 2005 and 2006, he was in charge of analog circuit development for high-resolution and high-speed CMOS image sensors. In July 2006, he joined IBM T. J.Watson Research Center, Yorktown Heights, NY, as a research staff member.
He is involved in development of low-power & high-performance memory subsystem architecture, research and development of future memory devices, BlueGene supercomputers, and high-speed & low-power I/O interface circuit technology for IBM servers and deep computing systems. He is also the IBM representative in JEDEC Solid State Technology Association for standardization of memory components and modules. He received JEDEC Technical Recognition Award in 2011, in recognition of his 'outstanding contributions in the development of the DDR4 standard'.
He received 4 Outstanding Technical Achievement Awards in 2011, 2012, 2014 and 2016.
He was elected IBM Master Inventor twice for 2011-2014, and 2015-2018.
In 2015, he became Technical Lead for DRAM and Future Memory. In 2016, he was titled as Principal Research Staff Member.
Dr. Kim has presented eight papers to the International Solid-State Circuits Conference (ISSCC) as first authors between 1996 and 2009, and received ISSCC Takuo Sugano Outstanding Paper Award in 2007. He is holding 123 issued U.S. patents.