Continue the scaling of current CMOS technology with efforts focused on innovative substrate engineering and exploration of novel materials as prototype of electronic devices beyond CMOS. Recent new initiatives involve designing and demonstration of ultra-sensitive radiation microdosimetric devices using SOI. Present efforts include taking lead of electrical characterization and analysis of several key programs.
Recent major accomplishments include:
• Successfully completing the IBMer Challenge: CAMSS (Cloud, Analytics, Mobile, Social, and Security).
• Demonstration of toggling of magnetic tunnel junction at cryogenic temperature with superior stability and improved margin.
• Completion of hybrid build that integrates superconducting electronics circuits with magnetic tunnel junction cells for cryogenic dissipationless memory.
• Driving the device design and physics part of FDSOI (fully-depleted Silicon-on-Insulator) radiation dosimeter project by collaborating with the Soft Error group in IBM and successfully demonstrated a device prototype, from which a Joint Research Agreement was established with University of Minnesota. Funding opportunity with Medical School of Duke University to develop an implantable dosimeter is in progress.
• Continue the aggressive scaling of current CMOS technology with efforts in process integration focused on innovative substrate engineering.
• Explore novel materials for potentials in electronic devices beyond CMOS.
• Co-Principal Investigator and proposal lead of DARPA (Defense Advanced Research Projects Agency) BAA 10-42 “Non-volatile (NV) Logic”.
• Co-investigator of proposal to DTRA (Defense Threat Reduction Agency) BAA HDTRA1-08-10-BRCWMD-BAA
• As the lead of backgated-ETSOI project, demonstrated the first backgated CMOS with tunable performance and power dissipation within the company, which made the project now one of the device candidates for the next CMOS technology node