HsinYu (Sidney) Tsai received her Ph.D. from the Electrical Engineering and Computer Science department at Massachusetts Institute of Technology in 2011. Her main research activities in Prof. Henry I. Smith’s group were on super-resolution optical lithography and imaging combining photo-chromic films and diffractive optics.
Sidney is currently working in the Nanofabrication and Electron Beam Lithography group at the IBM T.J. Watson Research Center in Yorktown Heights, N.Y, where she is developing next generation lithography for circuit applications with directed self-assembly. Sidney's main research activities are developing sub-30nm pitch pattern generation process and integration schemes for finFET device fabrication. More specifically, the team develops processes that utilizes the self-alignment nature of directed self-assembly (DSA) for finFET circuit patterning and characterizes devices made with such patterning schemes.