Conal E. Murray  Conal E. Murray photo       

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Research Staff Member
IBM T.J. Watson Research Center, Yorktown Heights, NY USA
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I joined the IBM Watson Research Center in 2000 as a Research Staff Member after completing my Ph.D. at Northwestern University in Materials Science and Engineering. Since that time, I've focused on the area of micromechanics as it applies to semiconductor materials and structures. My research includes applying and extending analytical mechanics models to incorporate edge effects and material anisotropy as well as numerical approaches such as those based on the boundary element method. Experimentally validating these models has involved extensive use of x-ray diffraction based techniques to assess strain distributions within back-end-of-line (BEOL) metallization structures and device-level silicon features. I'm a frequent visitor of the National Synchrotron Light Source at Brookhaven National Laboratory and the Advanced Photon Source at Argonne National Laboratory for both conventional and microbeam x-ray measurements. A couple of recent projects have involved the measurement of strained silicon-on-insulator (SOI) channels due to embedded source / drain stressors and the investigation of stress gradients within Cu films induced by capping (please see 'Publications' for more info).

Other areas of research include soft error rate (SER) modeling of semiconductor structures, the development of silicide materials for advanced interconnect applications, and the interplay betweeen stress, microstructure and texture in BEOL metallization.