Cyril Cabral Jr  Cyril Cabral Jr photo       

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Research Staff Member: Materials Science / Metallurgy
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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Cyril, Cabral, Jr. is a Research Staff Member at the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598. Mr. Cabral received his M.S.E.E. degree from Polytechnic University, Brooklyn, NY in 1992 and his B.S.E.E. degree from Manhattan College, Riverdale, NY in 1989. Additionally he has a B.S. degree from Pace University, Pleasantville, NY in Physics / Mathematics which he received in 1988. Mr. Cabral joined IBM in 1989 as an engineer in the Thin Film Metallurgy and Interconnections Group in the Silicon Technology Department. Currently Mr. Cabral is in the Thin Film Metallurgy and Soft Error Rate Research Group. His main focus has been in the area of silicides, copper interconnects, diffusion barriers, gate metals materials, phase change memory materials, intermetallic reactions and development of silicon based detectors for soft error rate reduction. Mr. Cabral holds one hundred and thirteen U.S. patents and is first author of nineteen publications and coauthor on over one hundred and seventy five additional publications.