Takashi Ando received the B.S. and M.E. degrees from the University of Tokyo, Tokyo, Japan, in 1999 and 2001, and the Ph.D. degree from Osaka University, Osaka, Japan, in 2010, all in Materials Science.
Dr. Ando joined Fujitsu Limited, Iwate, Japan, in 2001, where he engaged in process integration of Ferroelectric Random Access Memory. He moved to Sony Corporation, Atsugi, Japan, in 2003, and initiated the research on High-k/Metal Gate technology. He has been a Research Staff Member at IBM T. J. Watson Research Center since 2008. He received IBM Outstanding Technical Achievement Award for his contribution to the enablement of High-k/Metal Gate Technology in 2013. His current research interests include ultimate scaling of High-k gate dielectrics for the Si-based CMOS devices, and extension of this technology to high mobility channel materials, such as SiGe and InGaAs, for continued device scaling.
Dr. Ando has authored or co-authored more than 70 publications in peer-reviewed journals, refereed conference proceedings, and book chapters. He has served on the technical program committee of Conference of "Insulating Films on Semiconductors" (INFOS) since 2012, and on the technical program committee of IEEE Semiconductor Interface Specialists Conference (SISC) since 2013. He is a recipient of JSAP Young Scientist Award in 2011 and IEEE EDS George E. Smith Award in 2013.