Sangbum Kim  Sangbum Kim photo       

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Research Scientist : Electrical Engineering
Thomas J. Watson Research Center, Yorktown Heights, NY USA
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SangBum Kim received the B.S. degree from Seoul National University, Seoul, Korea, in 2001 and the M.S. and Ph.D. degrees from Stanford University, Stanford, CA, in 2005 and 2010, respectively, all in electrical engineering. His Ph.D. dissertation focused on the scalability and reliability of phase change memory (PCM) including scaling rule analysis, germanium nanowire diode as a scalable selection device, thermal disturbance, drift, and threshold switching. He is currently a Research Staff Member with the IBM T. J. Watson Research Center. His current research interests include characterization and modeling of PCM devices.